STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Features 100% avalanche tested Very low intrinsic capacitances Application Switching applications Description The SuperMESH™ series is obtained through an A built-in RS-232 communication port works with PowerAlert Software to provide shutdown commands and condition reporting. An accessory slot accepts an optional network management card option. May 22, 2016 · Very low VCE (sat) 1.5V (typ.) 2. Maximum Junction Temperature 175°C 3. Short circuit withstand time 5 us 4. Positive temperature coefficient in VCE (sat) 5. very tight parameter distribution 6. high ruggedness, temperature stable behaviour 7. very high switching speed 8. Low EMI 9.
6N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R502-117. L ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT 1NK60Z N-channel 600V 13 OHM 0.8A To-92/ipak/sot-223 Zener-protected Supermesh Mosfet N-CHANNEL TO-92 - IPAK - SOT-223 Zener-Protected SuperMESHTM Power MOSFET. 100% avalanche tested Extremely high dv/dt capability Gate charge minimized ESD improved capability New high voltage benchmark.
11N60 Datasheet PDF, Looking for 11N60 Datasheet, 11N60 PDF Datasheet, 11N60 Equivalent, 11N60 Schematic, 11N60 Datasheets, Cross Reference, DATASHEETBANK , PDF Download,Free Search Site, Pinout
'2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP6N60C/FQPF6N60C QFET® FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect FMV11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability ... stp16nk60z - stb16nk60z-s stw16nk60z n-channel 600v - 0.38Ω -14ato-220/i2spak / to-247 zener-protected supermesh™ mosfet typical rds(on) = 0.38 Ω extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility description
20n60s datasheet, cross reference, circuit and application notes in pdf format. The Datasheet Archive. Search. Recent Listings Manufacturer Directory Get instant ... 600V,11A N-Channel MOSFET General Description Product Summary V DS ID (at V GS =10V) 11A R DS(ON) (at V GS =10V) < 0.65 Ω 100% UIS Tested 100% R g Tested Symbol VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, T STG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature.-55 to 150 300 ±30 4.8 39 345 690 ... 12CWQ10FNPbF www.irf.com 1 Bulletin PD-21090 rev. A 05/06 Major Ratings and Characteristics I F(AV) Rectangular 12 A waveform V RRM 100 V I FSM @ tp = 5 μs sine 330 A V F @6 Apk, T J = 125°C 0.65 V (per leg) T J range - 55 to 150 °C Characteristics Values Units Description/ Features The 12CWQ10FNPbF surface mount, center tap, Schottky
Data Sheet: Technical Data Rev. 7, 02/2013 Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. 2SK2700 1 2009-09-29 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII) 2SK2700 Chopper Regulator, DC–DC Converter and Motor Drive
C-14 IRGBC30S Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA Collector-to-Emitter Current 0 5 10 15 20 25 0 10 20 30 40 C T o t a l S w i t c h i n g L o s s e s (m J) I , Collector-to-Emitter Current (A) STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, I²PAK, TO-220 and IPAK packages Datasheet -production data Figure 1. Internal schematic diagram Features • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ...