seems a little daunting, you can use S PICEM OD. S M is a software program that quickly converts data book parameters into SPICE model parameters. Entering only the device type and maximum voltage and current ratings will produce a realistic model as all other parameters are A SPICE MODEL FOR TRIACs (preliminary version; incomplete) Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package BFR840L3RHESD Data Sheet 8 Revision 1.0, 2012-04-19 2 Features • Robust ultra low noise amplifier based on Infineon´s reliable high volume SiGe:C bipolar technology • Unique combination of high end RF performance and robustness: the amplifier. It is critical to minimize RF trace lengths and to use high-Q components to achieve optimal NF performance. Components R2 and C14 provide self biasingfor the device and RF grounding for one of the two source leads. Components C5 and L3 are placed on the opposing source lead and are used to tune the transistor’s source inductance. Apr 20, 2016 · However, I need the S-Parameter data as given in the datasheet of BGA2714 in section 8.3. Other devices' datasheets contain only the graphs of the scattering parameters and values at 3 different frequencies.
Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left the field, but others have come to take their places. Product data sheet Rev. 3 — 24 September 2012 3 of 17 NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics 6. Characteristics Table 6. DC characteristics Table 7. RF characteristics Symbol Parameter Conditions Typ Unit Zth(j-c) transient thermal impedance from ...
Product data sheet Rev. 01 — 13 July 2009 3 of 11 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 5. Limiting values  Tsp is the temperature at the solder point of the emitter lead. 6. Thermal characteristics Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). The RF Power Transistor Data Sheet. Pertinent design information for RF power transistors is usually presented in the form of large-signal input and output impedances, as shown in Fig. 7-1. Fig. 7-1 is a data sheet for the Freescale (formerly Motorola) MRF233 RF power transistor. The RF Power Transistor Data Sheet. Pertinent design information for RF power transistors is usually presented in the form of large-signal input and output impedances, as shown in Fig. 7-1. Fig. 7-1 is a data sheet for the Freescale (formerly Motorola) MRF233 RF power transistor. EMY1 / UMY1N / FMY1A Emitter common (dual transistors) Datasheet <For Tr1(PNP)> lOutline Parameter Value SOT-553 SOT-353 VCEO-50V IC-150mA EMY1 UMY1N <For Tr2(NPN)> (EMT5) (SMT5) Parameter Value SOT-25 VCEO 50V IC 150mA FMY1A (SMT5) lFeatures lInner circuit 1) Included a 2SA1037AK and a 2SC2412K
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 60 W with 14.3dB [email protected] 945 MHz/28 V New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. AM 3200 PIV System – V2 4 | P a g e 1 Main Characteristic of the Pulse IV System 1.1 General Description AM3200 is a useful instrument for Pulse IV and Load Pull applications. Pulse IV systems are used to bias transistors in quasi-isothermal conditions, enabling accurate compact modeling activities. The
Aug 10, 2017 · Measuring Ebers-Moll model parameters in transistors August 10, 2017 By David Herres Leave a Comment If transistor circuits are to be of any use or amenable to diagnostic procedures, we must be able to model them. NPN wideband silicon RF transistor Rev. 2 — 12 April 2019 Product data sheet S O T 1 4 3 B 1 Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550X is part of the BFU5 family of transistors, suitable for small signal to 2n3904 small signal npn transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the pnp complementary type is 2n3906 applications well suitable for tv and home appliance equipment small load switch transistor with RF Device Data NXP Semiconductors RF Power GaN Transistor This 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. This part is characterized and performance is guaranteed for applications NPN wideband silicon RF transistor Rev. 2 — 12 April 2019 Product data sheet S O T 1 4 3 B 1 Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550X is part of the BFU5 family of transistors, suitable for small signal to
Here's another similar question, or maybe the same said another way. There are several circuits out there that have transistors that were brought over on the Mayflower. How does a designer know by the data sheet (if he can indeed find this parchment scroll) that the QBa7X20 used originally in the circuit, could be replaced by a 2N5088?
RF Device Data Freescale Semiconductor, Inc. RF Power GaN Transistor This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of ... < Silicon RF Power MOS FET (Discrete) > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W PublicationDate:Oct．2011 2 ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 400 uA MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting ...  Vishaysemicondutors, BFR 93 -Silicon NPN Planar RF Transistor,ProductData Sheet, 2000,Vishay.  NXP Semiconductors, BFU725F/N1NPN wideband silicon germanium RF transistor, Product Data Sheet, 2009, NXP Semiconductors (www.nxp.com )