NXP Semiconductors PEMD12; PUMD12. NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transis-tors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: 4K PTZ Network Dome Camera Key Features Max. 8megapixel (3840 x 2160) resolution Real 4K 20x IR corrected optical zoom, 16x digital zoom Max. Prest 400˚/sec (Pan), 300˚/sec (Tilt) H.265, H.264, MJPEG, WiseStream support [email protected] (H.265, H.264) Max.
PN3640 MMBT3640 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) www.onsemi.com 3 Figure 1. Darlington Circuit Schematic BASE EMITTER COLLECTOR ≈ 8.0 k ≈ 120 Browse DigiKey's inventory of PNP TransistorsPNP. Features, Specifications, Alternative Product, Product Training Modules, and Datasheets are all available.
The TIP105 is a silicon Epitaxial-Base PNP transistor in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear and switching applications. The preferred complementary NPN type is the TIP102. ® INTERNAL SCHEMATIC DIAGRAM April 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N270 Transistor Datasheet pdf, 2N270 Equivalent. Parameters and Characteristics aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales EMY1 / UMY1N / FMY1A Datasheet lElectrical characteristic curves(Ta=25°C) <For Tr1(PNP)> Fig.9 Collector Output Capacitance vs. ollector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Fig.10 Safe Operating Area Fig.11 Safe Operating Area Fig.12 Safe Operating Area
Collector-emitter voltage: Emitter-base voltage. DC: Pulsed. Junction temperature: Range of storage temperature *1 Pw=10ms , single pulse *2 Each terminal mounted on a reference land PNP medium power transistor Features High current Low saturation voltage Complement to 2SD882 Applications Voltage regulation Relay driver Generic switch Audio power amplifier DC-DC converter Description The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. BCP 51 / 52 / 53 Datasheet Number: DS35366 Rev. 6 - 2 1 of 7 www.diodes.com March 2015 © Diodes Incorporated BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT223 ST Microelectronics catalog page 3, datasheet, datasheet search, data sheet, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, semiconductors
A1015 PNP Epitaxial Silicon Transistor Elite Enterprises (H.K.) Co., Ltd. Part No.: A1015 Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852 ...
Dec 13, 2018 · A1266 Datasheet PDF - PNP Transistor - KEC, 2SA1266 datasheet, A1266 pdf, A1266 pinout, equivalent, A1266 data, A1266 circuit, output, ic, schematic. 4K PTZ Network Dome Camera Key Features Max. 8megapixel (3840 x 2160) resolution Real 4K 20x IR corrected optical zoom, 16x digital zoom Max. Prest 400˚/sec (Pan), 300˚/sec (Tilt) H.265, H.264, MJPEG, WiseStream support [email protected] (H.265, H.264) Max.
PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementarycircuits. The complementary NPN types are the BD135 BD137 andBD139. PN4258 PNP Switching Transistor • This device is designed for very high speed saturated switching at collector currents to 100mA. • Sourced from process 65. 1. Emitter 2. Base 3. Collector 1 TO-92