MRF6VP2600HR6 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. HOME PRODUCTS & SERVICES DATASHEETS RF TRANSISTORS RFMW LTD. RF POWER TRANSISTOR -- 2N6200 ... 188 Martinvale Lane San Jose, CA 95119 USA Phone: (408) 414-1450 ...
OptiMOSª 5 Power-Transistor, 80 V IPB015N08N5 Final Data Sheet Rev. 2.1, 2015-10-15 1 7 tab D²-PAK 7pin Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 1 Description Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x RDS(on) product (FOM) BUK9675-100A N-channel TrenchMOS logic level FET 18 August 2015 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic Features, Applications: NPN Silicon Planar Epitaxial Transistors. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching Applications. Package outline SOT539B datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. Electronic Components Datasheet SearchOxford University Press USA publishes scholarly works in all academic disciplines, bibles, music, children's books, business books, dictionaries, reference books, journals, text books and more.
HOME PRODUCTS & SERVICES DATASHEETS RF TRANSISTORS RFMW LTD. ... 188 Martinvale Lane ... RF Power Transistor, up to 1 GHz, 1 W, 7 dB, 28 V, BiPolar, Ceramic ...Semiconductors. NTE's 1st product line was semiconductors. 35 years later it has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
DATA SHEET SILICON TRANSISTOR NE68133 / 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET Document No. P10360EJ4V1DS00 (4th edition) Date Published March 1997 N DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to
Our RF Power Transistors are manufactured by Ampleon, Qorvo, NXP, Microsemi and P1dB. Maximum frequencies range to 25 GHz, with output power up to 2000 Watts. LDMOS, GaAs and GaN technologies are available. Please use the RF Power Transistor filters below to select your product, or call us for availability and pricing at 1 (877) 367-7369.2SD188 datasheet, 2SD188 pdf, 2SD188 data sheet, datasheet, data sheet, pdfON Semiconductor Bipolar Transistors - BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for ON Semiconductor Bipolar Transistors - BJT.
LP2980 LP2980 OT-23 O-220 TL/H/12078-54 bS011S4 transistor NEC D 882 p B5G1 B45196 transistor tl 187 transistor NEC D 882 p 6V TL 188 TRANSISTOR PIN DIAGRAM nec d 882 p datasheet nec d 882 p marking BSs sot-23: LP2980-5. Abstract: 1E475ZY5U-C304 045H5 L01A LP29801 LP29801m5 LA 7123 tokin L7 GG67 MA05A Text: PNP pass transistor . If the ...Datasheet -production data Features ... assured by NPN pass transistor. In fact in this case, unlike than PNP one, the quiescent current ... TJ = 25 °C 1.188 1.20 1 ... But you probably want the transistor to fully turn on when it is saturated. Then you should see on the datasheet its "saturation Vce voltage loss" which is always when its base current is 1/10th its collector current. Please learn about simple numbers. 188.3 (almost two hundred) IS NOT 188,300 (almost two hundred thousand).A full list of transistors is here. Original new replacement transistors from Ampleon, NXP, Phillips, Motorola, Freescale, ST, Infineon and others. These are used for servicing or building RF amplifiers for radio/TV/HAM bands. If you can't find your transistor below feel free to email us, we may be able to get it for you.DATA SHEET SILICON TRANSISTOR Document No. P10388EJ2V0DS00 (2nd edition) (Previous No. TD-2430) Date Published July 1995 P Printed in Japan 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use
About RFMW RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization. Understanding BEL188 Transistor Specification/Datasheet The transistor BEL188 is a general purpose transistor, and due to its wide voltage and current rating can be used for almost all small to medium power circuit applications.