Solarbotics, Ltd. is not responsible for misprints or errors on product prices or information. For more information, please see our Terms and Conditions.. Warning: This product contains chemicals known to the State of California to cause cancer and birth defects or other reproductive harm. Features, Applications: NPN silicon planar switching transistors. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted * Features, Applications: NPN silicon planar switching transistors. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. Jun 15, 2019 · The transistor 2N3904 comes under the category of NPN small signal, low power, general purpose transistor, mainly applicable for switching and for signal amplification. It's dynamic range may include a current handling capability of more than 100mA for switching applications and a 100MHz frequency handling capacity fits with amplification purposes.
It is a little more powerful than the 2n3904. Most likely the current gain is less, and and maybe also the maximal voltages. Depending on your application that may be OK, which is quite likely if it is not too demanding. The correct thing would for you to check the numbers in the data sheet. 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C
kn3904 datasheet (pdf) 1.1. kn3904s.pdf size:71k _kec semiconductor kn3904s technical data epitaxial planar npn transistor general purpose application. switching application. e features l b l dim millimeters low leakage current _ + 2.93 0.20 a b 1.30+0.20/-0.15 : icex=50na(max.) ; @vce=30v, veb=3v. Since the 2N3904 is an NPN transistor, that means the base needs positive biasing (appropriate voltage levels and resistance) to turn on the collector emitter junction for proper current flow. Use of a load resistor (R1 above) is also important so there is not too much current being driven through the LED and transistor.
2N3904, 2N3904 NPN General Purpose Transistor, buy 2N3904 Transistor ... 2N3904 Datasheet Pricing Information 1+ $0.06 25+ $0.05 100+ $0.04 ... Type: Mat: Struct: Pc: Vcb: Vce: Veb: Ic: Tj: Ft: Cc: Hfe: Caps: 2N3904 Si NPN 0.31 60 40 6 0.2 135 300 4 40 TO92 2N3904A Si NPN 1.5 60 40 NXP Semiconductors Product data sheet NPN switching transistor PMBT3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.
2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. Fastest Cortex-M3 MCU, Largest SRAM, High Speed USB, LPC1837 datasheet, LPC1837 circuit, LPC1837 data sheet : NXP, alldatasheet, datasheet, Datasheet search site for ...
2N3904 Datasheet (PDF) 1.1. 2n3904g.pdf Size:398K _upd SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: f T = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V