IR1167(A,B)S. At that point the IR1167 will drive the gate of MOSFET on which will in turn cause the conduction voltage V. time. D ... Compare pricing for Rockwell R6522AP across 4 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart.
4013B Datasheet, 4013B PDF, 4013B Data sheet, 4013B manual, 4013B pdf, 4013B, datenblatt, Electronics 4013B, alldatasheet, free, datasheet, Datasheets, data sheet ... Click here for the datasheet for NTE4013B. If this datasheet link is broken, the datasheet may still be available at nteinc.com . This part is the equivalent replacement for the following: IRF9358PbF HEXFET Power MOSFET Notes through are on page 2 Applications • ˘ˇ ˆˇ ˙ˇˇ˝ ˛ ˚˜ ! ˇ SO-8 Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Packa ge Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier results in ⇒
Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury Data sheet acquired from Harris Semiconductor SCHS026C − Revised September 2003 The CD4016 “B” Series types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-line plastic packages (E suffix), 14-lead small-outline packages (M, MT, M96, and NSR suffixes), and 14-lead thin shrink small-outline ...
29 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) Application : Audio and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –140 –140 –6 –10 ... electronics distributor stock part numbers from 4012BTSMD to 4013E-2BG225I, letter 4 , list 0 IRGB4055PbF IRGS4055PbF E C G n-channel GC E Gate Collector Emitter D2Pak IRGS4055DPbF E C G C TO-220 IRGB4055DPbF C E C G Absolute Maximum Ratings Parameter Units V GE Gate-to-Emitter Voltage V I C @ T C = 25°C Continuous Collector Current, V GE @ 15V I C @ T C = 100°C Continuous Collector, V GE @ 15V I RP @ T C = 25°C Repetitive Peak ... 4013 datasheet, 4013 pdf, 4013 data sheet, datasheet, data sheet, pdf
This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components. Tube Data Sheet Locator. Warning: Substitutes are given as a guide only - please refer to original manufacturers data sheets to ensure that a substitute is safe and appropriate for your application. Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode , used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. Philips Semiconductors Product speciﬁcation Dual D-type ﬂip-ﬂop HEF4013B ﬂip-ﬂops DESCRIPTION The HEF4013B is a dual D-type flip-flop which features independent set direct (S D), clear direct (C D), clock inputs (CP) and outputs (O, O). Data is accepted when CP is LOW and transferred to the output on the positive-going edge of the clock. IR1167(A,B)S. At that point the IR1167 will drive the gate of MOSFET on which will in turn cause the conduction voltage V. time. D ...
Download the Toshiba T6963C LCD Controller Datasheet and browse our LCDs that use this controller. Version 1997-04-07 T6963C Dot Matrix LCD Controller General: Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass: 70 g. General characteristic Type 6P3SZ 6P3SZ-E Filament voltage, Volt 6,3 6,3 Anode voltage, Volt 250 250 1st grid voltage, Volt -14 -14 2nd grid voltage, Volt 250 250 Type 6P3SZ 6P3SZ-E
Aug 30, 2016 · 1. XR-4136CP NTE Equivalent NTE997 IC-QUAD OP AMP. (30x) 2. C4570C Datasheet UPC4570C 3.TL072CP Operational Amplifiers - Op Amps JFET Input Low Noise TL072CP... Click here for the datasheet for NTE4013B. If this datasheet link is broken, the datasheet may still be available at nteinc.com . This part is the equivalent replacement for the following: The CD4013B dual D-type flip-flop is a monolithic comple- mentary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement mode transistors.